ORCID: 0009-0000-7556-7579

Preprints

Refereed papers

1. Katsuhiro Tanaka, Takuya Nomoto, and Ryotaro Arita,
   ‘‘First-principles study of the tunnel magnetoresistance effect with Cr-doped RuO₂ electrode’’
   Phys. Rev. B 110, 064433 (2024).

2. Meng Wang^*, Katsuhiro Tanaka^*, Shiro Sakai, Ziqian Wang, Ke Deng, Yingjie Lyu, Cong Li, Di Tian, Shengchun Shen, Naoki Ogawa, Naoya Kanazawa, Pu Yu, Ryotaro Arita, Fumitaka Kagawa, (^*: equal contribution)
   ‘‘Emergent zero-field anomalous Hall effect in a reconstructed rutile antiferromagnetic metal’’
   Nat. Commun. 14, 8240 (2023).

3. Katsuhiro Tanaka, Takuya Nomoto, and Ryotaro Arita,
   ‘‘Local density of states as a probe for tunneling magnetoresistance effect: Application to ferrimagnetic tunnel junctions’’
   Phys. Rev. B 107, 214442 (2023).

4. Xianzhe Chen^*, Tomoya Higo^*, Katsuhiro Tanaka^*, Takuya Nomoto, Hanshen Tsai, Hiroshi Idzuchi, Masanobu Shiga, Shoya Sakamoto, Ryoya Ando, Hidetoshi Kosaki, Takumi Matsuo, Daisuke Nishio-Hamane, Ryotaro Arita, Shinji Miwa, and Satoru Nakatsuji, (^*: equal contribution)
   ‘‘Octupole-driven magnetoresistance in an antiferromagnetic tunnel junction’’
   Nature 613, 490 (2023).
   プレスリリース

5. Katsuhiro Tanaka and Chisa Hotta,
   ‘‘Finite-temperature thermodynamic properties of spin-1 nematics in an applied magnetic field’’
   Phys. Rev. B 102, 140401(R) (2020).

6. Katsuhiro Tanaka and Chisa Hotta,
   ‘‘Multiple quadrupolar or nematic phases driven by the Heisenberg interactions in a spin-1 dimer system forming a bilayer’’
   Phys. Rev. B 101, 094422 (2020).

7. Katsuhiro Tanaka, Yuto Yokoyama, and Chisa Hotta,
   ‘‘Origin of Biquadratic Exchange Interactions in a Mott Insulator as a Driving Force of Spin Nematic Order’’
   J. Phys. Soc. Jpn. 87, 023702 (2018).

Reviews, miscellaneous

1. Katsuhiro Tanaka, Takuya Nomoto, and Ryotaro Arita,
   ‘‘Approaches to tunnel magnetoresistance effect with antiferromagnets’’ (Topical Review)
   J. Phys. Condens. Matter 37, 183003 (2025).

2. Tomoya Higo, Katsuhiro Tanaka, and Satoru Nakatsuji,
   「トポロジカル物質はいかに応用されうるか」 (How can topological materials be applied?) (Japanese article)
   Mathematical Sciences, May 2024, p. 58.

3. Katsuhiro Tanaka, Tomoya Higo, and Satoru Nakatsuji,
   「反強磁性トンネル磁気抵抗効果の観測─超高速・高密度・省電力メモリの開発に向けて─」 (Observation of Antiferromagnetic Tunneling Magnetoresistance Effect─Toward Development of Ultrafast,High Density, and Power-Saving Memory─) (Japanese article)
   Jido-sha Gijutsu (Journal of Society of Automotive Engineers of Japan), December 2023, p. 118.